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| SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) -30 0.010 @ VGS = -4.5 V rDS(on) (W) 0.007 @ VGS = -10 V ID (A)a "75 "75 TO-220AB S TO-263 G DRAIN connected to TAB G GDS Top View SUP75P03-07 SUB75P03-07 P-Channel MOSFET DS Top View D ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c TC = 25_C TC = 125_C Symbol VGS ID IDM IAR EAR PD TJ, Tstg Limit "20 -75a -65 Unit V A -240 -60 180 187d W 3.75 -55 to 175 _C mJ Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. Document Number: 71109 S-00821--Rev. B, 24-Apr-00 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC 62.5 0.8 Symbol RthJA Limit 40 Unit _C/W 2-1 SUP/SUB75P03-07 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -30 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = -30 V, VGS = 0 V, TJ = 125_C VDS = -30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -30 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -10 V, ID = -30 A, TJ = 125_C VGS = -10 V, ID = -30 A, TJ = 175_C VGS = -4.5 V, ID = -20 A Forward Transconductancea gfs VDS = -15 V, ID = -75 A 20 0.008 -120 0.0055 0.007 0.010 0.013 0.010 W S W -30 V -1 -3 "100 -1 -50 -250 A mA A nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = -15 V, RL = 0.2 W , ID ] -75 A, VGEN = -10 V, RG = 2.5 W VDS = -15 V VGS = -10 V, ID = -75 A 15 V, 10 V 75 VGS = 0 V, VDS = -25 V f = 1 MHz V 25 V, MH 9000 1565 715 160 32 30 25 225 150 210 40 360 ns 240 340 240 nC C pF F Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = -75 A, di/dt = 100 A/ms 75 A di/d A/ IF = -75 A, VGS = 0 V -1.2 55 2.5 0.07 -75 A -240 -1.5 100 5 0.25 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71109 S-00821--Rev. B, 24-Apr-00 SUP/SUB75P03-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) 5V 150 I D - Drain Current (A) 160 200 TC = -55_C 25_C Transfer Characteristics 120 125_C 100 4V 50 3V 0 0 2 4 6 8 10 80 40 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 150 TC = -55_C 120 g fs - Transconductance (S) 25_C 125_C 90 r DS(on)- On-Resistance ( W ) 0.025 0.030 On-Resistance vs. Drain Current 0.020 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 60 30 0 0 20 40 60 80 100 0 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 12000 20 Gate Charge Ciss V GS - Gate-to-Source Voltage (V) 10000 C - Capacitance (pF) 16 VDS = 15 V ID = 75 A 8000 12 6000 8 4000 Coss 2000 Crss 0 6 12 18 24 30 4 0 0 0 50 100 150 200 250 300 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71109 S-00821--Rev. B, 24-Apr-00 www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB75P03-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 1.8 VGS = 10 V ID = 30 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 r DS(on) - On-Resistance ( W ) (Normalized) TJ = 150_C 1.2 0.9 10 0.6 TJ = 25_C 0.3 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 45 Drain Source Breakdown vs. Junction Temperature ID = 250 mA 100 I Dav (a) IAV (A) @ TA = 25_C V (BR)DSS (V) IAV (A) @ TA = 150_C 1 30 40 10 35 0.1 0.00001 0.0001 0.001 0.01 0.1 1 25 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71109 S-00821--Rev. B, 24-Apr-00 SUP/SUB75P03-07 Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 90 1000 Safe Operating Area 75 100 I D - Drain Current (A) 60 I D - Drain Current (A) 10 ms 100 ms Limited by rDS(on) 45 10 1 ms 10 ms 100 ms dc 30 1 15 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Document Number: 71109 S-00821--Rev. B, 24-Apr-00 www.vishay.com S FaxBack 408-970-5600 2-5 |
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